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IS62C51216AL IS65C51216AL
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
* High-speedaccesstime:45ns,55ns * CMOSlowpoweroperation - 36 mW (typical) operating -12W(typical)CMOSstandby * TTLcompatibleinterfacelevels * Singlepowersupply -4.5V--5.5VVdd * Fullystaticoperation:noclockorrefresh required * Threestateoutputs * Datacontrolforupperandlowerbytes * Automotivetemperature(-40oC to +125oC) * Lead-freeavailable
APRIL 2009
speed,8MbitstaticRAMsorganizedas512Kwordsby16 bits. It is fabricated using ISSI'shigh-performanceCMOS technology. This highly reliable process coupled with innovativecircuitdesigntechniques,yieldshigh-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UBareHIGH,thedeviceassumesastandbymode at which the power dissipation can be reduced down with CMOSinputlevels. Easy memory expansion is provided by using Chip Enable andOutputEnableinputs.TheactiveLOWWriteEnable(WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB)andLowerByte(LB) access. TheIS62C51216ALandIS65C51216ALarepackagedin theJEDECstandard48-pinminiBGA(9mmx11mm)and 44-PinTSOP(TYPEII).
DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16 MEMORY ARRAY
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CS2 CS1 OE WE UB LB
CONTROL CIRCUIT
Copyright (c) 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
1
IS62C51216AL, IS65C51216AL
PIN CONFIGURATIONS 48-Pin mini BGA (9mmx11mm)
1 2 3 4 5 6
PIN DESCRIPTIONS
A0-A18 I/O0-I/O15 CS1, CS2 OE WE LB UB NC Vdd GND AddressInputs DataInputs/Outputs Chip Enable Input OutputEnableInput Write Enable Input Lower-byteControl(I/O0-I/O7) Upper-byteControl(I/O8-I/O15) No Connection Power Ground
A B C D E F G H
LB I/O8 I/O9 GND VDD I/O14 I/O15 A18
OE UB I/O10 I/O11 I/O12 I/O13 NC A8
A0 A3 A5 A17 NC A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2 CS1 I/O1 I/O3 I/O4 I/O5 WE A11
CS2 I/O0 I/O2 VDD GND I/O6 I/O7 NC
44-Pin TSOP (Type II)
A4 A3 A2 A1 A0 CS1 I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 A18 A8 A9 A10 A11 A17
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
TRUTH TABLE
Mode NotSelected OutputDisabled Read WE X X X H H H H H L L L CS1 H X X L L L L L L L L CS2 X L X H H H H H H H H OE X X X H H L L L X X X LB X X H L X L H L L H L UB X X H X L H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z dout High-Z High-Z dout dout dout dIn High-Z High-Z dIn dIn dIn Vdd Current Isb1, Isb2 Isb1, Isb2 Isb1, Isb2 Icc Icc Icc

Write
Icc
OPERATING RANGE (Vdd)
Range Ambient Temperature Vdd Speed
Commercial Industrial Automotive
0Cto+70C -40Cto+85C -40Cto+125C
4.5V-5.5V 4.5V-5.5V 4.5V-5.5V
45ns 55ns 55ns
CAPACITANCE(1,2)
Symbol cIn cout Parameter Input Capacitance OutputCapacitance Conditions VIn = 0V Vout = 0V Max. 5 7 Unit pF pF
Notes: 1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters. 2. Testconditions:Ta = 25c, f=1MHz,Vdd=5.0V.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
3
IS62C51216AL, IS65C51216AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Vterm tstg Pt Iout Parameter TerminalVoltagewithRespecttoGND StorageTemperature PowerDissipation DCOutputCurrent(LOW) Value -0.5to+7.0 -65to+150 1.5 20 Unit V C W mA
Notes: 1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Symbol Parameter VoH OutputHIGHVoltage VoL OutputLOWVoltage VIH InputHIGHVoltage VIL InputLOWVoltage(1) ILI InputLeakage Test Conditions Vdd = Min.,IoH = -1mA Vdd = Min.,IoL = 2.1mA GND VIn Vdd Com. Ind. Auto. Com. Ind. Auto. Min. 2.4 -- 2.2 -0.3 -1 -2 -5 -1 -2 -5 Max. -- 0.4 Vdd + 0.5 0.8 1 2 5 1 2 5 Unit V V V V A
ILo
OutputLeakage
GND Vout Vdd OutputsDisabled
A
Note: 1. VIL (min) = -0.3VDC;VIL (min) = -2.0VAC(pulsewidth-2.0ns).Not100%tested. VIH (max) = Vdd + 0.3VDC;VIH (max) = Vdd + 2.0VAC(pulsewidth-2.0ns).Not100%tested.
4
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
AC TEST CONDITIONS
Parameter InputPulseLevel InputRiseandFallTimes InputandOutputTiming andReferenceLevel OutputLoad Unit 0Vto3.0V 5ns 1.5V SeeFigures1and2

AC TEST LOADS
481 5V OUTPUT 30 pF Including jig and scope 255
5V OUTPUT 5 pF Including jig and scope 255 481
Figure1
Figure2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
5
IS62C51216AL, IS65C51216AL
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
Symbol Parameter Test Conditions Icc VddDynamicOperatingVdd = Max.,CE = VIL Supply Current Iout = 0 mA, f = fmaX VIn = VIH or VIL Icc1 CE = VIL, VIn = VIH or VIL, I I/o= 0 mA TTLStandbyCurrent Vdd = Max., (TTLInputs) VIn = VIH or VIL, CE VIH, f=0 CMOSStandby Vdd = Max., Current(CMOSInputs) CE Vdd - 0.2V, VIn Vdd - 0.2V, or VIn Vss + 0.2V, f = 0 Average operating Current -45 ns Min. Max. -- 25 13 -- 10 -- 1 -- 40 15 -55 ns Min. Max. -- -- 12 mA -- -- -- -- -- -- 10 20 mA 1.5 2 A 60 180 25 40 Unit mA
Isb1 Isb2
Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. Com. Ind. Auto. typ.(2)
Note: 1. At f = fmaX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2.TypicalValuesaremeasuredatVcc=5V,Ta = 25oCandnot100%tested.
6
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
Symbol Parameter ReadCycleTime AddressAccessTime OutputHoldTime CS1/CS2AccessTime OEAccessTime OEtoHigh-ZOutput OEtoLow-ZOutput CS1/CS2toHigh-ZOutput CS1/CS2toLow-ZOutput LB, UBAccessTime 45 ns Min. 45 -- 10 -- -- -- 5 0 10 -- 0 0 Max. -- 45 -- 45 20 15 -- 15 -- 45 15 -- 55 ns Min. 55 -- 10 -- -- -- 5 0 10 -- 0 0 Max. -- 55 -- 55 25 20 -- 20 -- 55 20 -- 70 ns Min. 70 -- 10 -- -- -- 5 0 10 -- 0 0 Max. -- 70 -- 70 35 25 -- 25 -- 70 25 -- Unit ns ns ns ns ns ns ns ns ns ns ns ns
trc taa toHa3 tacs1/tacs2 tdoe tHzoe(2) tLzoe(2) tHzcs1/tHzcs2(2) tLzcs1/tLzcs2(2) tba tHzb LB, UBtoHigh-ZOutput tLzb LB, UBtoLow-ZOutput
Notes: 1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V andoutputloadingspecifiedinFigure1. 2. TestedwiththeloadinFigure2.Transitionismeasured500mVfromsteady-statevoltage.Not100%tested. 3.10nsforCMOSLoading.8ns@ACLoading.
AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE=VIL, cs2 = WE=VIH, UB or LB = VIL)
tRC
ADDRESS
tAA tOHA tOHA
DATA VALID
DQ0-D15
PREVIOUS DATA VALID
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
7
IS62C51216AL, IS65C51216AL
AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS1, CS2, OE,ANDUB/LB Controlled)
tRC
ADDRESS
tAA tOHA
OE
tDOE tHZOE
CS1s
tACE1/tACE2
tLZOE
CS2s
tLZCE1/ tLZCE2
tHZCS1/ tHZCS1
LBs, UBs
tLZB tBA tHZB
DOUT
HIGH-Z
DATA VALID
Notes: 1. WEisHIGHforaReadCycle. 2. Thedeviceiscontinuouslyselected.OE, CS1, UB, or LB = VIL. cs2=WE=VIH. 3. Address is valid prior to or coincident with CS1LOWtransition.
8
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)(OverOperatingRange)
Symbol Parameter twc WriteCycleTime tscs1/tscs2 CS1/CS2toWriteEnd taw AddressSetupTimetoWriteEnd tHa AddressHoldfromWriteEnd tsa AddressSetupTime tPwb LB, UBValidtoEndofWrite (4) tPwe WEPulseWidth tsd DataSetuptoWriteEnd tHd DataHoldfromWriteEnd (3) tHzwe WELOWtoHigh-ZOutput tLzwe(3) WEHIGHtoLow-ZOutput 45ns Min. Max. 45 -- 35 -- 35 -- 0 -- 0 -- 35 -- 35 -- 25 -- 0 -- -- 20 5 -- 55 ns Min. Max. 55 -- 45 -- 45 -- 0 -- 0 -- 45 -- 40 -- 30 -- 0 -- -- 20 5 -- 70 ns Min. Max. 70 -- 60 -- 60 -- 0 -- 0 -- 60 -- 50 -- 30 -- 0 -- -- 30 5 -- Unit ns ns ns ns ns ns ns ns n s ns ns
Notes: 1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto 3.0VandoutputloadingspecifiedinFigure1. 2. Theinternalwritetimeisdefinedbytheoverlapof CS1 LOW,CS2HIGHandUB or LB, and WELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,but any one can go inactive to terminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatesthe write. 3. TestedwiththeloadinFigure2.Transitionismeasured500mVfromsteady-statevoltage.Not100%tested. 4.tPwe > tHzwe + tsd when OEisLOW.
AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CS1 Controlled, OE=HIGHorLOW)
tWC
ADDRESS
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE
WE LB, UB
tSA tHZWE
tPWB
tLZWE
HIGH-Z
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
Notes: 1. WRITEisaninternallygeneratedsignalassertedduringanoverlapoftheLOWstatesontheCS1 , CS2 and WE inputs and at least one of the LB and UBinputsbeingintheLOWstate. 2. WRITE=(CS1) [ (LB) = (UB) ] (WE).
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
9
IS62C51216AL, IS65C51216AL
WRITE CYCLE NO. 2 (WEControlled:OEisHIGHDuringWriteCycle)
tWC
ADDRESS
OE
tSCS1 tHA
CS1
tSCS2
CS2
tAW t PWE
WE
LB, UB
tSA tHZWE
HIGH-Z
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
WRITE CYCLE NO. 3 (WEControlled:OEisLOWDuringWriteCycle)
tWC
ADDRESS
OE
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE
WE
LB, UB
tSA tHZWE
HIGH-Z
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
10
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
WRITE CYCLE NO. 4 (UB/LB Controlled)
t WC
ADDRESS
ADDRESS1
t WC
ADDRESS2
OE
t SA
CS1 CS2
LOW HIGH
WE
t HA t SA t PBW t PBW
WORD2
t HA
UB, LB
WORD1
t HZWE
DOUT
DATAUNDEFINED
HIGH-Z
t LZWE t HD
DATAIN VALID
t SD
DIN
t SD
DATAIN VALID
t HD
UB_CSWR4.eps
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
11
IS62C51216AL, IS65C51216AL
DATA RETENTION SWITCHING CHARACTERISTICS (4.5V - 5.5V)
Symbol
Vdr
Idr
tsdr trdr
Parameter VddforDataRetention DataRetentionCurrent DataRetentionSetupTime RecoveryTime
Test Condition SeeDataRetentionWaveform Vdd=2.0V,CS1 Vdd -0.2V SeeDataRetentionWaveform SeeDataRetentionWaveform
Com. Ind. Auto.
Min. 2.0 -- -- -- -- 0
trc
Typ.(1) 15 -- --
Max. 5.5 20 40 60 180 -- --
Unit V A ns ns

Note: 1.TypicalValuesaremeasuredatVcc=5V,Ta = 25oCandnot100%tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
tSDR VDD 1.65V Data Retention Mode tRDR
1.4V
VDR CS1 VDD - 0.2V
CS1 GND
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode VDD CE2 2.2V VDR 0.4V GND CS2 0.2V tSDR tRDR
3.0
12
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
IS62C51216AL (4.5V - 5.5V) Industrial Range: -40C to +85C
Speed (ns) 55 Order Part No.* IS62C51216AL-55TLI IS62C51216AL-55MLI Package TSOP-II,Lead-free miniBGA,Lead-free(9mmx11mm)
*Devices will meet 45ns when used in 0oC to +70oC temperature range.
IS65C51216AL (4.5V - 5.5V) Industrial Range: -40C to +125C
Speed (ns) 55 Order Part No. IS65C51216AL-55CTLA3 IS65C51216AL-55MLA3 Package TSOP-II,Lead-free,CopperLead-frame miniBGA,Lead-free(9mmx11mm)
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
13
14
IS62C51216AL, IS65C51216AL
NOTE :
1. CONTROLLING DIMENSION : MM 2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Package Outline
06/04/2008
Rev. A 03/18/09
IS62C51216AL, IS65C51216AL
08/21/2008
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 03/18/09
NOTE :
1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MO-207
15

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